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| v02.1201 MICROWAVE CORPORATION HMC278MS8G 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz Features P1dB Output Power: +20 dBm Single Supply: +3V to +5V Ultra Small 8 Lead MSOP Package 1 AMPLIFIERS - SMT Typical Applications The HMC278MS8G is ideal for: * PCS/3G & WLAN * MMDS & ISM Radios * HomeRF & BLUETOOTH Functional Diagram General Description The HMC278MS8G is a 100mW GaAs MMIC medium power amplifier covering 1.7 to 3 GHz. The device is packaged in a low cost, surface mount 8 lead MSOP plastic package with an exposed base paddle for improved RF ground and thermal dissipation. The self-biased amplifier provides 21 dB of gain and +20 dBm P1dB output power while operating from a single positive supply of Vdd= +5V @ 130 mA. At Vdd = +3V the gain is 19 dB with a P1dB of +16dBm. With RF I/Os matched to 50 Ohm, external component requirements are minimal. At a height of 0.040" (1.0mm), the MSOP8 package is ideal for low profile portable wireless devices. Use the HMC278MS8G with the HMC309MS8 integrated LNA/TxRx switch front-end for BLUETOOTH Class I, HomeRF, 802.11 WLAN, and ISM 2.4 GHz radios. Electrical Specification, TA = +25 C, As a Function of Vdd Vdd = +5V Parameter Min. Frequency Range Gain Gain Flatness (Over Any 200 MHz BW) Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) S a t u r a t e d O u t p u t Po w e r ( P s a t ) Output Third Order Intercept (IP3) Noise Figure Supply Current (I d d) 5 6 46 13.5 16 26 15 Typ. 1.7 - 3.0 20 0.7 10 10 52 19 21 32 6 130 165 7 7 48 16.5 19 29 25 16 Max. Min. Typ. 2.3 - 2.5 21 0.5 10 10 52 20 22 32 6 130 165 7 7 48 12.5 15 28 25 15 Max. Min. Typ. 2.3 - 2.5 19 0.5 10 10 52 16 18 32 6 125 140 23 Max. Units GHz dB dB dB dB dB dBm dBm dBm dB mA Vdd = +5V Vdd = +3V 1 - 38 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v02.1201 MICROWAVE CORPORATION HMC278MS8G 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz Broadband Gain & GaAs MMIC = +5V PUMPED MIXER Return Loss @ Vdd SUB-HARMONICALLY P1dB vs. Vdd Bias 25 20 15 25 23 21 17 - 25 GHz 1 AMPLIFIERS - SMT 1 - 39 RESPONSE (dB) P1dB (dBm) 10 5 0 -5 -10 -15 -20 1 1.5 2 2.5 S11 S21 S22 19 17 15 13 11 Vdd=+5V 9 7 3 3.5 4 4.5 5 5 1.5 2 Vdd=+3V 2.5 FREQUENCY (GHz) 3 3.5 FREQUENCY (GHz) Gain vs. Temperature @ Vdd = +5V 24 22 20 Gain vs. Temperature @ Vdd = +3V 24 22 20 GAIN (dB) 18 16 14 12 10 1.5 +25C +85C -40C GAIN (dB) 18 16 14 12 10 1.5 +25C +85C -40C 2 2.5 FREQUENCY (GHz) 3 3.5 2 2.5 FREQUENCY (GHz) 3 3.5 Input & Output Return Loss vs. Vdd Bias 0 Reverse Isolation vs. Vdd Bias 0 -10 @ Vdd= +3V @ Vdd= +5V RETURN LOSS (dB) -5 ISOLATION (dB) S11 @ Vdd=+5V S22 @ Vdd=+5V S11 @ Vdd=+3V S22 @ Vdd=+3V -20 -30 -40 -50 -60 -70 1.5 -10 -15 -20 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 2 2.5 FREQUENCY (GHz) 3 3.5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v02.1201 MICROWAVE CORPORATION HMC278MS8G 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz 1 AMPLIFIERS - SMT Power Compression @ 2.0 GHz, Vdd = +5V 24 22 20 18 16 14 12 10 8 6 4 2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Pout (dBm) Gain (dB) PAE (%) Power Compression @ 2.5 GHz, Vdd = +5V 24 22 20 18 16 14 12 10 8 6 4 2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Pout (dBm) Gain (dB) PAE (%) Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 4 6 8 10 4 6 8 10 INPUT POWER (dBm) INPUT POWER (dBm) PSAT vs. Temperature @ Vdd = +5V 25 23 P1dB vs. Temperature @ Vdd = +5V 25 23 21 OUTPUT P1dB (dBm) 21 19 19 17 15 13 11 9 7 5 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 +25C +85C -40C Psat (dBm) 17 15 13 11 9 7 5 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 +25C +85C -40C Output IP3 vs. Temperature @ Vdd = +5V GH GH 2.0 -40 C +25 0C +85 0C 0 2.5 32.4 31.9 31.4 3.0 29.4 29.1 28.5 32.7 32.5 32.7 All levels in d m 1 - 40 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v02.1201 MICROWAVE CORPORATION HMC278MS8G 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz Power Compression @ 2.0 GHz, Vdd = +3V 24 22 20 18 16 14 12 10 8 6 4 2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 Pout (dBm) Gain (dB) PAE (%) Power Compression @ 2.5 GHz, Vdd = +3V 24 22 20 18 16 14 12 10 8 6 4 2 8 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 Pout (dBm) Gain (dB) PAE (%) 1 AMPLIFIERS - SMT 1 - 41 Pout (dBm), GAIN (dB), PAE (%) 2 4 6 Pout (dBm), GAIN (dB), PAE (%) 2 4 6 8 INPUT POWER (dBm) FREQUENCY (GHz) PSAT vs. Temperature @ Vdd = +3V 25 23 21 19 P1dB vs. Temperature @ Vdd = +3V 25 23 21 OUTPUT P1dB (dBm) 19 17 15 13 11 9 7 +25C +85C -40C Psat (dBm) 17 15 13 11 9 7 5 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 +25C +85C -40C 5 1.5 2 2.5 FREQUENCY (GHz) 3 3.5 Output IP3 vs. Temperature @ Vdd = +3V 2.0 -40 C +25 0C +85 0C 0 2.5 27.8 27.5 26.9 3.0 25.7 25.5 24.6 27.8 27.7 27.3 All levels in d m For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v02.1201 MICROWAVE CORPORATION HMC278MS8G 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz 1 AMPLIFIERS - SMT Absolute Maximum Ratings Supply Voltage (Vdd) Input Power (RFin)(Vdd = +5V) Channel Temperature (Tc) Thermal Resistance ( jc) (Channel Backside) Storage Temperature Operating Temperature +8 Vdc +10 dBm 175 C 65 C/W -65 to +150 C -55 to +85 C Note: 100 pF bypass capacitor to ground on Vdd line is recommended. Outline Drawing 1. MATERIAL: A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC. B. LEADFRAME & PADDLE MATERIAL: COPPER ALLOY 2. PLATING: LEAD & PADDLE - TIN SOLDER PLATE 3. DIMENSIONS ARE IN INCHES (MILLIMETER). UNLESS OTHERWISE SPECIFIED, ALL TOL. ARE 0.005 ( 0.13). 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 1 - 42 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v02.1201 MICROWAVE CORPORATION HMC278MS8G 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz Recommended PCB Layout for HMC278MS8G 1 AMPLIFIERS - SMT The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. Evaluation Circuit Board Layout Design Details Item J1, J2 J3, J4 C1 U1 PCB* *Circuit Board Material: Roger 4350 Description PC Mount SMA Connector DC Pin 10,000 pF Capacitor, 0603 Pkg. HMC278MS8G Amplifier 103600 Evaluation Board For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com 1 - 43 |
Price & Availability of HMC278MS8G01
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